 | Gallium Arsenide (GaAs)-Pellets | 99.999% | 1303-00-0 | 3 mm - 6 mm | Inquire |
 | Gallium Arsenide (GaAs)-Powder | 99.99% | 1303-00-0 | 40~50μm | Inquire |
 | Gallium Arsenide (GaAs)-Sputtering Target | 99.999% | 1303-00-0 | 2 inch dia x 0.125 inch th.etc | Inquire |
 | Manganese Phosphide (Mn3P2)-Powder | 99% | 12263-33-1 | - 100 mesh approx | Inquire |
 | Manganese Antimonide (Mn2Sb)-Powder | 99.5% | 12032-97-2 | - 100 mesh | Inquire |
 | Tin Antimonide (SnSb)-Sputtering Target | 99.99% | 28980-49-6 | 4 inch dia x 0.25 inch th.etc | Inquire |
 | Tin Antimonide (SnSb)-Powder | 99.99% | | - 180 mesh | Inquire |
 | Indium Antimonide (InSb)-Powder | 99.99 %-99.99999 % | 1312-41-0 | - 100 mesh approx | Inquire |
 | Indium Antimonide (InSb)-Pellets | 99.999% | 1312-41-0 | ＜6mm | Inquire |
 | Indium Antimonide (InSb)-Sputtering Target | 99.99%-99.9999 % | 1312-41-0 | 6 inch dia x 5 mm th.etc | Inquire |
 | Aluminum Antimonide (AlSb)-Pellets | 99.99% | 25152-52-7 | 3 - 6 mm | Inquire |
 | Aluminum Antimonide (AlSb)-Sputtering Target | 99.99 % | 25152-52-7 | 2 inch dia x 0.125 inch th.etc | Inquire |
 | Indium Phosphide (InP)-Wafer | <100> | 22398-80-7 | 4‘’/6‘’ | Inquire |
 | Indium Arsenide (InAs)-Wafer | <100> | 1303-11-3 | 4‘’/6‘’ | Inquire |
 | Indium Arsenide (InAs)-Ingot | 99.999% | 1303-11-3 | 1 inch dia x .5 inch long | Inquire |
 | Aluminum Arsenide (AlAs)-Powder | 99.5% | 22831-42-1 | - 20 mesh approx、- 200 mesh | Inquire |
 | Nickel phosphide (Ni2P) - Powder | 99.9% | 12035-64-2 | 100 mesh approx | Inquire |
 | Indium Arsenide (InAs)-Pellets | 99.99%-99.999 % | 1303-11-3 | 3 mm - 6 mm | Inquire |
 | Cadmium Arsenide (Cd3As2)-Powder | 99.999% | 12006-15-4 | - 325 mesh | Inquire |
 | Indium Phosphide (InP)-Pellets | 99.99%-99.999% | 22398-80-7 | 3 mm - 6 mm | Inquire |
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