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Characteristic
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
Chemical formula：InP
Molar mass：145.792 g/mol
Appearance：black cubic crystals
Density：4.81 g/cm3, solid
Melting point：1,062 °C (1,944 °F; 1,335 K)
Solubility：slightly soluble in acids[1]
Band gap：1.344 eV (300 K; direct)
Electron mobility：5400 cm2/(V·s) (300 K)
Thermal conductivity：0.68 W/(cm·K) (300 K)
Refractive index (nD)：3.1 (infrared);
3.55 (632.8 nm)
Crystal structure：Zinc blende
Application
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.
It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Characteristic
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
Chemical formula：InP
Molar mass：145.792 g/mol
Appearance：black cubic crystals
Density：4.81 g/cm3, solid
Melting point：1,062 °C (1,944 °F; 1,335 K)
Solubility：slightly soluble in acids[1]
Band gap：1.344 eV (300 K; direct)
Electron mobility：5400 cm2/(V·s) (300 K)
Thermal conductivity：0.68 W/(cm·K) (300 K)
Refractive index (nD)：3.1 (infrared);
3.55 (632.8 nm)
Crystal structure：Zinc blende
Application
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.
It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
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