Annoucement : Welcome to visit our website, Any inquiry, please check CONTACT US. Payment related business, please confirm with our salesman, Have a nice visit trip.
English  |
12063-98-8
GaP
311500ST
99.999%
2 inch dia x 0.25 inch th.
235-057-2
Characteristic
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.
Chemical formula：GaP
Molar mass：100.697 g/mol
Appearance：pale orange solid
Odor：odorless
Density：4.138 g/cm3
Melting point：1,457 °C (2,655 °F; 1,730 K)
Solubility in water：insoluble
Band gap：2.24 eV (indirect, 300 K)
Electron mobility：300 cm2/(V·s) (300 K)
Magnetic susceptibility (χ)：-13.8×10−6 cgs
Thermal conductivity：0.752 W/(cm·K) (300 K)
Refractive index (nD)：2.964 (10 µm), 3.209 (775 nm), 3.590 (500 nm), 5.05 (354 nm)
Crystal structure：Zinc blende
Application
Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.
Characteristic
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.
Chemical formula：GaP
Molar mass：100.697 g/mol
Appearance：pale orange solid
Odor：odorless
Density：4.138 g/cm3
Melting point：1,457 °C (2,655 °F; 1,730 K)
Solubility in water：insoluble
Band gap：2.24 eV (indirect, 300 K)
Electron mobility：300 cm2/(V·s) (300 K)
Magnetic susceptibility (χ)：-13.8×10−6 cgs
Thermal conductivity：0.752 W/(cm·K) (300 K)
Refractive index (nD)：2.964 (10 µm), 3.209 (775 nm), 3.590 (500 nm), 5.05 (354 nm)
Crystal structure：Zinc blende
Application
Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.
 20+ YEARS EXPERIENCEOVER $200 MILLION SALES |
