Gallium Phosphide (GaP)-Sputtering Target

Characteristic

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.

Chemical formula：GaP

Molar mass：100.697 g/mol

Appearance：pale orange solid

Odor：odorless

Density：4.138 g/cm³

Melting point：1,457 °C (2,655 °F; 1,730 K)

Solubility in water：insoluble

Band gap：2.24 eV (indirect, 300 K)

Electron mobility：300 cm2/(V·s) (300 K)

Magnetic susceptibility (χ)：-13.8×10⁻⁶ cgs

Thermal conductivity：0.752 W/(cm·K) (300 K)

Refractive index (nD)：2.964 (10 µm), 3.209 (775 nm), 3.590 (500 nm), 5.05 (354 nm)

Crystal structure：Zinc blende

Application

Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.