Titanium sputtering target material

Metal sputtering target overview 

The target material is the target material bombarded by high speed charged particles.  There are metals, alloys, oxides and so on.  Change different target material (such as aluminum, copper, stainless steel, titanium, nickel target, etc.), can get different film system (such as super hard, wear resistant, corrosion resistant alloy film, etc.).  

(1) Metal target:  Nickel, Ni, Titanium, Ti, Zinc, Zn, Chromium, Cr, Magnesium, Mg, Niobium, Nb, tin, Sn, Al, Al, Indium, In, Fe, Fe, Zr, ZrAl, Ti-Al, TiAl, Zr, Al-Si, AlSi, Si, Copper, Cu, Tantalum T, A, Germanium, Ge, Silver, A  G, cobalt target, Co, gold target, Au, gadolinium target, Gd, lanthanum target, La, yttrium target, Y, cerium target, Ce target, tungsten target, W, stainless steel target, NiCr, hafnium target, Hf, Molybdenum target, Mo, fe-Ni target, FeNi, tungsten target, W, etc.  

(2) Ceramic target:  ITO target target, ferric oxide, magnesium oxide target, target, target, silicon carbide silicon nitride titanium nitride target target target, target, zinc sulfide, zinc oxide, chromium oxide, silicon dioxide, target, target a silicon oxide, cerium oxide target, zirconium dioxide target, niobium pentoxide target target, target, titanium dioxide, zirconium dioxide, hafnium target, target, titanium diboride diboride zirconium target, tungsten trioxide target,  Aluminum oxide target tantalum pentaoxide, niobium pentaoxide target, magnesium fluoride target, yttrium fluoride target, zinc selenide target, aluminum nitride target, silicon nitride target, boron nitride target, titanium nitride target, silicon carbide target, lithium niobate target, praseodymium titanate target, barium titanate target, lanthanum titanate target, nickel oxide target, sputtering target, etc. 

Main performance requirements of metal sputtering target

(1) Purity  

Purity is one of the main performance indexes of the target material, because the purity of the target material has a great influence on the performance of the film.  But in practice, the purity of target material is not the same.  For example, with the rapid development of microelectronics industry, silicon wafer size from 6 ", 8 "to 12", and wiring width from 0.5um to 0.25um, 0.18um or even 0.13um, the former 99.995% target purity can meet the process requirements of 0.35UMIC,  The preparation of 0.18um line requires 99.999% or even 99.9999% purity of target material.  

(2) Impurity content  

Impurities in target solids and oxygen and water vapor in pores are the main pollution sources of deposited films.  Different target materials for different purposes have different requirements for different impurity content.  For example, pure aluminum and aluminum alloy targets used in the semiconductor industry have special requirements for alkali metal content and radioactive element content.  

(3) Density  

In order to reduce the porosity in the target solid and improve the properties of the sputtering film, the target is usually required to have a high density.  The target density affects not only the sputtering rate but also the electrical and optical properties of the films.  The higher the target density, the better the film performance.  In addition, increasing the density and strength of the target makes it better able to withstand the thermal stress during sputtering.  Density is also one of the key performance indexes of target material.  

(4) Grain size and grain size distribution  

Usually the target material is polycrystalline with grain size ranging from micron to millimeter.  For the same target, the sputtering rate of the target with fine grain is faster than that of the target with coarse grain.  The thin films deposited by target sputtering with smaller grain size difference (uniform distribution) have more uniform thickness distribution.  

Metal sputtering target texture  

TA0, TA1, TA2, TA9, TA10, ZR2, ZR0, GR5, GR2, GR1, TC11, TC6, TC4, TC3, TC2, TC1 

Metal sputtering target application  

Widely used in decorative coating, wear-resistant coating, electronic industry CD, VCD and other kinds of optical disc coating and all kinds of disk coating.  

Tungsten-titanium (W-Ti) film and tungsten-titanium (W-Ti) based alloy film are high-temperature alloy films with a series of irreplaceable excellent properties.  Tungsten has high melting point, high strength and low thermal expansion coefficient, while W/ Ti alloy has low resistivity, good thermal stability and oxidation resistance.  For example, all kinds of devices need conductive metal wiring, such as Al, Cu and Ag, which has been widely used and studied.  However, the wiring metal itself is easy to oxidize, easy to react with the surrounding environment, and poor bonding with the dielectric layer, easy to diffuse into the substrate materials of Si and SiO2 devices, and at lower temperatures will form metal and Si compounds, acting as impurities, so that the performance of the device significantly decreased.  W-ti alloy is easy to be used as a diffusion barrier layer for wiring due to its stable thermo-mechanical properties, low electron mobility, high corrosion resistance and chemical stability, especially suitable for use in high current and high temperature environment.