Wide Band Gap Semiconductor (WBGS) is a new third generation Semiconductor material developed after the first generation of silicon, germanium and the second generation of gallium arsenide, indium phosphatide materials. Silicon carbide​ (SiC) is the third generation of semiconductor materials outstanding generation 9) table. Silicon carbide technology is mature enough that high-quality 4-inch wafers are commercially available and 6-inch wafers are available. Read More »

Silicon carbide (SiC) has a broad application prospect in semiconductor, nuclear energy, national defense and space technology due to its good wear resistance, high temperature mechanical properties, oxidation resistance and other properties. With the development of society and the progress of science and technology, electronic equipment and instruments tend to be more and more precise, miniaturization and high performance, and put forward new requirements for heat conduction and heat dissipation. Read More »

In everyone's impression, ceramics is fragile, but after modern technology processing, ceramics "suddenly changed", has become a hard, high strength new material, since the 21st century, bullet-proof ceramics developed rapidly, there are many kinds, including alumina, silicon carbide​, boron carbide, silicon nitride, titanium boride, etc. Among them, alumina ceramics (Al2O3), silicon carbide ceramics (SiC), boron carbide ceramics (B4C) are widely used. Read More »

Lithium ion batteries (LIB) have become the cornerstone of portable electronics, electric vehicles and alternative energy economy due to their long life, good storage performance, high energy density and high operating voltage. Improving the electrode material is the most important and feasible method to improve the electrochemical performance of LIB. Read More »

Semiconductor materials after decades of development, the first generation of silicon semiconductor material has been close to the perfect crystal, silicon material research is also very thorough. The design and development of devices based on silicon materials have gone through many generations of structural and technological optimization and update, and are gradually approaching the limit of silicon materials Read More »

Based on silicon devices on the design and development has undergone many generations of the structure and process optimization and renewal, is gradually close to the limit of the silicon material, based on the potential to improve the performance of silicon devices become more and more small to gallium nitride, silicon carbide​ as a representative of the third generation of semiconductor have excellent physical properties of materials in order to further improve the performance of the power electronics device provides a bigger space. Read More »