Silicon nitride​ (Si3N4) thin films are widely used as dielectric materials. As amorphous insulating material, dielectric properties of silicon nitride film is better than that of silica membranes, have to the movable ions blocking ability strong, compact structure, small pinhole density, good chemical stability, high dielectric constant, etc. In the field of integrated circuit manufacturing is widely used for surface passivation coating, insulation, impurity diffusion etching mask mask, as well as the surface of the semiconductor encapsulation and so on. Read More »

In recent years, material scientists have synthesized a new class of 312 ceramic materials​, whose general formula is M3XZ2, in which M is one or several transition metal elements (such as Ti, V, etc.), X is one or several main group elements, multiple III and IV main group elements (such as Al, Ge, Si, etc.), Z is one or several non-metallic elements (such as C, N, B, etc.). Read More »

Aluminum nitride​ has high resistivity, high thermal conductivity (8-10 times of Al2O3), and low expansion coefficient similar to silicon, making it an ideal material for high temperature and high power electronic devices. Commonly used ceramic substrate materials are beryllium oxide, alumina, aluminum nitride, etc., among which alumina ceramic substrate thermal conductivity is low, thermal expansion coefficient and silicon do not match; Read More »

Silicon nitride​ (Si3N4) is a kind of ceramic material with high melting point and high hardness and chemical inertness. Hot-pressed silicon nitride, in particular, is one of the hardest substances in the world. Silicon nitride ceramics have low thermal expansion coefficient and high thermal conductivity, so they have excellent thermal shock resistance. Read More »