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Views: 4 Author: Site Editor Publish Time: 2022-03-03 Origin: Site
Aluminum nitride has high resistivity, high thermal conductivity (8-10 times of Al2O3), and low expansion coefficient similar to silicon, making it an ideal material for high temperature and high power electronic devices.
Commonly used ceramic substrate materials are beryllium oxide, alumina, aluminum nitride, etc., among which alumina ceramic substrate thermal conductivity is low, thermal expansion coefficient and silicon do not match; Although beryllium oxide has excellent properties, its powder is highly toxic. In the existing ceramic materials that can be used as substrate materials, silicon nitride ceramic has the highest bending strength, good wear resistance, the best comprehensive mechanical properties of ceramic materials, and its thermal expansion coefficient is the smallest. And aluminum nitride ceramics have high thermal conductivity, good thermal impact resistance, high temperature still has good mechanical properties. It can be said that aluminum nitride and silicon nitride are the most suitable materials for electronic packaging substrates from the point of view of performance, but they also have a common problem is that the price is too high.
Aluminum nitride (AlN) has a maximum direct bandgap width of 6.2eV, which has a higher photoelectric conversion efficiency than indirect bandgap semiconductor. As an important blue and ultraviolet luminescent material, AlN is used in ULTRAVIOLET/deep ultraviolet light-emitting diodes, ultraviolet laser diodes and ultraviolet detectors. In addition, AlN can form continuous solid solutions with group III nitride compounds such as GaN and InN, and its three or four element alloys can achieve continuous tunable band gap from visible band to deep ultraviolet band, making it an important high-performance luminescent material.
AlN crystals are ideal substrates for GaN, AlGaN and AlN epitaxial materials. Compared with sapphire or SiC substrates, AlN has higher thermal matching and chemical compatibility with GaN, and lower stress between substrate and epitaxial layer. Therefore, AlN crystal as GaN epitaxial substrate can greatly reduce the defect density in the device, improve the performance of the device, and has a good application prospect in the preparation of high temperature, high frequency, high power electronic devices. In addition, the substrate of AlGaN epitaxial material with AlN crystal as high Al component can effectively reduce the defect density in the nitride epitaxial layer, and greatly improve the performance and service life of nitride semiconductor devices. High quality daily blind detector based on AlGaN has been successfully applied.
Aluminum nitride can be used in the sintering of structural ceramics. The prepared aluminum nitride ceramics have not only good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, but also high temperature and corrosion resistance. AlN ceramics can be used to make crucible, Al evaporating dish and other high-temperature corrosion resistant parts. In addition, pure AlN ceramics are colorless transparent crystals with excellent optical properties, which can be used as heat-resistant coatings for high temperature infrared Windows and fairings of transparent ceramics manufacturing electronic optical devices.
As a packaging material, epoxy resin /AlN composite materials need good thermal conductivity and heat dissipation, and this requirement is becoming more and more stringent. Epoxy resin as a kind of polymer material with good chemical properties and mechanical stability, it is easy to cure, low shrinkage, but low thermal conductivity. By adding AlN nanoparticles with excellent thermal conductivity into epoxy resin, the thermal conductivity and strength of the material can be effectively improved.
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