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Gallium Arsenide (GaAs)-Powder

  • 1303-00-0
  • GaAs
  • 313300PD
  • 99.99%
  • 40~50μm
  • 215-114-8
  • Class 6.1
  • UN1557
  • PG II
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Characteristic

 

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.


Chemical formula:GaAs

Molar mass:144.645 g/mol

Appearance:Gray crystals

Odor:garlic-like when moistened

Density:5.3176 g/cm3

Melting point:1,238 °C (2,260 °F; 1,511 K)

Solubility in water:insoluble

Solubility:soluble in HCl

insoluble in ethanol, methanol, acetone

Band gap:1.441 eV (at 300 K)

Electron mobility:9000 cm2/(V·s) (at 300 K)

Magnetic susceptibility (χ):-16.2×10−6 cgs

Thermal conductivity:0.56 W/(cm·K) (at 300 K)

Refractive index (nD):3.3

Crystal structure:Zinc blende

 

Application

 

Semiconductors (transistors, lasers, solar cells)Gallium arsenide is used in semiconductor applications. It is also used in the manufacture of devices such as microwave frequency integrated circuits, Gunn diodes, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes and optical windows. Further, it is used for single-crystalline thin film solar cells and multi-junction solar cells. In addition, it is used for the detection of X-rays.

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