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22831-42-1
AlAs
133300PD
99.5%
- 20 mesh approx、- 200 mesh
245-255-0
UN1394
Characteristic
Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
Chemical formula：AlAs
Molar mass：101.9031 g/mol
Appearance：orange crystals
Density：3.72 g/cm3
Melting point：1,740 °C (3,160 °F; 2,010 K)
Solubility in water：reacts
Solubility：reacts in ethanol
Band gap：2.12 eV (indirect)
Electron mobility：200 cm2/(V·s) (300 K)
Thermal conductivity：0.9 W/(cm·K) (300 K)
Refractive index (nD)：3 (infrared)
Application
Aluminum arsenide is a III-V compound semiconductor material and is an advantageous material for the manufacture of optoelectronic devices, such as light emitting diodes.
Aluminum arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques. However, aluminum arsenide crystals prepared by these methods are generally unstable and generate arsine (AsH3) when exposed to moist air.
Aluminum arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques. However, aluminum arsenide crystals prepared by these methods are generally unstable and generate arsine (AsH3) when exposed to moist air.
Characteristic
Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
Chemical formula：AlAs
Molar mass：101.9031 g/mol
Appearance：orange crystals
Density：3.72 g/cm3
Melting point：1,740 °C (3,160 °F; 2,010 K)
Solubility in water：reacts
Solubility：reacts in ethanol
Band gap：2.12 eV (indirect)
Electron mobility：200 cm2/(V·s) (300 K)
Thermal conductivity：0.9 W/(cm·K) (300 K)
Refractive index (nD)：3 (infrared)
Application
Aluminum arsenide is a III-V compound semiconductor material and is an advantageous material for the manufacture of optoelectronic devices, such as light emitting diodes.
Aluminum arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques. However, aluminum arsenide crystals prepared by these methods are generally unstable and generate arsine (AsH3) when exposed to moist air.
Aluminum arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques. However, aluminum arsenide crystals prepared by these methods are generally unstable and generate arsine (AsH3) when exposed to moist air.
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