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Aluminum Arsenide (AlAs)-Powder

  • 22831-42-1
  • AlAs
  • 133300PD
  • 99.5%
  • - 20 mesh approx、- 200 mesh
  • 245-255-0
  • UN1394
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Characteristic


Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. 


Chemical formula:AlAs

Molar mass:101.9031 g/mol

Appearance:orange crystals

Density:3.72 g/cm3

Melting point:1,740 °C (3,160 °F; 2,010 K)

Solubility in water:reacts

Solubility:reacts in ethanol

Band gap:2.12 eV (indirect)

Electron mobility:200 cm2/(V·s) (300 K)

Thermal conductivity:0.9 W/(cm·K) (300 K)

Refractive index (nD):3 (infrared)


Application


Aluminum arsenide is a III-V compound semiconductor material and is an advantageous material for the manufacture of optoelectronic devices, such as light emitting diodes.


Aluminum arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques. However, aluminum arsenide crystals prepared by these methods are generally unstable and generate arsine (AsH3) when exposed to moist air.


Aluminum arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques. However, aluminum arsenide crystals prepared by these methods are generally unstable and generate arsine (AsH3) when exposed to moist air.


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