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1303-00-0
GaAs
313300GN
99.999%
3 mm - 6 mm
215-114-8
Class 6.1
UN1557
PG II
Due to dangerous materials, the delivery date cannot be fully guaranteed (maybe extended). Don't hesitate to contact us for details.
Characteristic
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Chemical formula：GaAs
Molar mass：144.645 g/mol
Appearance：Gray crystals
Odor：garlic-like when moistened
Density：5.3176 g/cm3
Melting point：1,238 °C (2,260 °F; 1,511 K)
Solubility in water：insoluble
Solubility：soluble in HCl
insoluble in ethanol, methanol, acetone
Band gap：1.441 eV (at 300 K)
Electron mobility：9000 cm2/(V·s) (at 300 K)
Magnetic susceptibility (χ)：-16.2×10−6 cgs
Thermal conductivity：0.56 W/(cm·K) (at 300 K)
Refractive index (nD)：3.3
Crystal structure：Zinc blende
Application
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Due to dangerous materials, the delivery date cannot be fully guaranteed (maybe extended). Don't hesitate to contact us for details.
Characteristic
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Chemical formula：GaAs
Molar mass：144.645 g/mol
Appearance：Gray crystals
Odor：garlic-like when moistened
Density：5.3176 g/cm3
Melting point：1,238 °C (2,260 °F; 1,511 K)
Solubility in water：insoluble
Solubility：soluble in HCl
insoluble in ethanol, methanol, acetone
Band gap：1.441 eV (at 300 K)
Electron mobility：9000 cm2/(V·s) (at 300 K)
Magnetic susceptibility (χ)：-16.2×10−6 cgs
Thermal conductivity：0.56 W/(cm·K) (at 300 K)
Refractive index (nD)：3.3
Crystal structure：Zinc blende
Application
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
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