Five kinds of sputtering coating technologies' advantages and disadvantages.

Unbalanced magnetron sputtering

If the magnetic flux of the inner and outer magnetic poles of the magnetron sputtering cathode is not equal, it is an unbalanced magnetron sputtering cathode.  The magnetic field of the ordinary magnetron sputtering cathode is concentrated near the target, while the magnetic field of the non-equilibrium magnetron sputtering cathode diverges much to the target. The magnetic field of the ordinary magnetron cathode is tightly bound to the target, while the plasma near the substrate is very weak, and the substrate will not be bombarded by ions and electrons.  The non-equilibrium magnetically controlled cathode magnetic field can extend the plasma to the far commercial target and immerse the substrate.  

Radio frequency (RF) sputtering  

The principle of stacking insulating film: a negative potential is applied to the conductor on the back of the insulating target. In the glow discharge plasma, when the positive ion guide body plate slows down to fly, the insulating target in front of it is fired to make it sputtering.  This sputtering can only persist for 10-7 seconds, and then the positive potential formed by the positive charge accumulated on the insulating target plate counteracts the negative potential on the conductor plate, thus stopping the bombardment of the insulating target by high-energy positive ions.  At this point, if the polarity of the power supply is reversed, the electrons will attack the insulating board and neutralize the positive charge on the insulating board within 10-9 seconds, making it zero potential.  At this time, then reverse the polarity of the power supply, and can attack the advantages of 10-7 seconds of sputtering RF sputtering: both sputtering metal target, also can be plated insulator medium target cedar  

Dc magnetron sputtering  

Magnetron sputtering coating equipment is added in the dc sputtering cathode target, the magnetic field applied magnetic field away the lorentz force bound and extension of electricity in the electric field movement track, add electronic knock against opportunities with gas atoms, the atomic ionization yu gas conductivity to add, make the high-energy ion bombardment of the target material rights and shelling is more plating substrate of high-energy electrons increases.  

Advantages of stereoscopic magnetron sputtering  

1, The target power density can reach 12W/cm2;  

2, The target voltage can reach 600V3. The gas pressure can reach 0.5PA.  

3, Three-dimensional magnetron sputtering defects: the target in the runway area of sputtering channel, the entire target surface etching is not even, the target application rate is only 20%~30%.  

Medium frequency communication linkage sputtering  

Refers to the medium frequency communication magnetron sputtering equipment, the general two size and shape of the opposite target side by side, often called twin target.  They are suspension mounts.  In general, two targets are powered together, and in the process of if communication magnetron echo sputtering, the two targets alternately act as anode and cathode, and interact as positive-cathode in the same half period.  When the target is at negative half cycle potential, the target surface is sputtered by positive ion shelling.  In positive half cycle, the plasma charge is slowed down to reach the target surface, and the positive charge accumulated on the insulating surface of the target surface is neutralized, which not only controls the target surface ignition, but also eliminates the anode vanishing scene.  

The advantage of medium frequency double target echo sputtering

(1) High accumulation rate.  For silicon targets, the stacking rate of intermediate frequency echo sputtering is 10 times that of DC echo sputtering.  

(2) Sputtering process can fluctuate at the set operation point.

(3) Eliminate the "lighting" scene.  The defect density of the prepared insulating film is several orders of magnitude less than that of the DC reactive sputtering method.

(4) Higher substrate temperature is beneficial to improve the quality and adhesion of the film.

(5) If power supply is more complex and target matching than RF power supply.