Manganese telluride (MnTe) is a hot material. The quasi-reluctance in Manganese telluride (MnTe) extends to very high temperatures and produces a thermoelectric potential much stronger than that generated by electron charges alone. Thermoelectric materials convert heat directly into electricity without emitting toxic gases or requiring moving parts. Read More »

Indium occupies an important position in the scattered metals. It is mainly used in the manufacture of III-V semiconductors, cathode ray phosphors, mercury-free zinc powders, transparent conductive films and other electronic and battery materials. In addition, indium alloys and indium coatings are also widely used in industry. Read More »

High-purity germanium is a semiconductor material used in the manufacture of semiconductor devices. The germanium single crystal doped with a small amount of specific impurities can be used to make various transistors, rectifiers and other devices. High-purity germanium single crystal has a high refractive index. Read More »

Cadmium zinc telluride, also called CdZnTe, abbreviated as CZT. CZT crystal is a wide band gap II-VI compound semiconductor, which can be regarded as solid solution of CdTe and ZnTe. The melting point varies between 1092 and 1295 degrees Celsius depending on the amount of Zn added. Read More »

Sb2Te3 is a main material with basic functions, and its thermoelectricity is applied as a new energy source such as solar energy on the basis of doping properties and solid-state phase transition properties are used as key materials for publicity. Read More »

Polysilicon is an electronic material with industrial silicon as raw material and purified by a series of physical and chemical reactions. It is the main raw material of silicon polishing sheet, solar cell and high purity silicon products. Read More »

Neodymium oxide, also known as neodymium trioxide in Chinese, Nd₂O₃, CAS is 1313-97-9 a metal oxide. It is insoluble in water and soluble in acid. Read More »

In this study, the internal microstructure of powders can be controlled at micro and nano scale during the rapid cooling process of ceramic melt, and the geometric characteristics of grains can be controlled during powder sintering process, which provides a new technical principle for the development of ultra-high toughness nano-ceramics. Read More »

Due to its high specific capacity, moderate lithium deposition voltage, abundant natural reserves, low price, high safety and environmental protection, tin-based materials​ have attracted the attention of researchers and are regarded as one of the next generation of ideal lithium anode materials. Read More »

In this context, lithium ferromanganese phosphate (LMFP), as an upgraded replacement material for lithium iron phosphate, has attracted much attention in the market. Read More »

Quartz glass is a special industrial technology glass composed of silica single component, with a series of special physical and chemical properties, and is known as the "king of glass" by experts in the field of new materials. Read More »

Compared with the traditional lithium ion battery, the theoretical energy density of lithium sulfur battery​ can reach 2680Wh/kg at the average voltage of 2.15V, which is about 6 times of the energy density of the current lithium ion battery. Therefore, it is considered as one of the most potential systems to replace the traditional lithium ion battery. Read More »

So far, cubic boron arsenide has only been manufactured and tested on a laboratory scale, these products are not uniform, and more work is needed to determine if cubic boron arsenide can be made in a practical, economical form. But researchers say that in the near future, people may find some useful uses for the material, and its unique properties could make a significant difference. Read More »

Cadmium telluride (CdTe) is an important group ⅱ-ⅵ compound semiconductor material with black crystalline particles or powders, melting point of 1092℃, relative molecular weight of 240, crystal structure of sphalerite type, with direct transition type band structure. The lattice constant is 0.6481nm, the bandgap width is 1.45eV, the electron mobility at room temperature is 1050 C ㎡/(Vs), and the hole mobility at room temperature is 80 C ㎡/(Vs). Read More »

Alloy sputtering target has higher requirements than other materials. In addition to general requirements such as purity, size, impurity content and defect control, there are also special requirements such as surface roughness, composition and tissue uniformity, impurity (oxide) content and size. Read More »