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12040-02-7
SnTe
505200PD
99.99 %-99.999 %
- 160 mesh (-150 mic aps)
234-914-8
Class 6.1
UN3288
PGIII
Characteristic
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.
Chemical formula：SnTe
Molar mass：246.31 g/mol
Appearance：gray cubic crystals
Density：6.445 g/cm3
Melting point：790 °C (1,450 °F; 1,060 K)
Band gap：0.18 eV
Electron mobility：500 cm2 V−1 s−1
Crystal structure：Halite (cubic), cF8
Application
Generally Pb is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of Quantum confinement, the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR photodetectors and thermoelectric generator.
Characteristic
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.
Chemical formula：SnTe
Molar mass：246.31 g/mol
Appearance：gray cubic crystals
Density：6.445 g/cm3
Melting point：790 °C (1,450 °F; 1,060 K)
Band gap：0.18 eV
Electron mobility：500 cm2 V−1 s−1
Crystal structure：Halite (cubic), cF8
Application
Generally Pb is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of Quantum confinement, the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR photodetectors and thermoelectric generator.
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