Annoucement : Welcome to visit our website, Any inquiry, please check CONTACT US. Payment related business, please confirm with our salesman, Have a nice visit trip.
English  |
12040-02-7
SnTe
505200GN
99.99 %-99.999 %
3 mm - 12 mm/3 mm - 6 mm
234-914-8
Class 6.1
UN3288
PG III
Characteristic
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.
Chemical formula：SnTe
Molar mass：246.31 g/mol
Appearance：gray cubic crystals
Density：6.445 g/cm3
Melting point：790 °C (1,450 °F; 1,060 K)
Band gap：0.18 eV
Electron mobility：500 cm2 V−1 s−1
Crystal structure：Halite (cubic), cF8
Application
Generally Pb is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of Quantum confinement, the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR photodetectors and thermoelectric generator.
Characteristic
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.
Chemical formula：SnTe
Molar mass：246.31 g/mol
Appearance：gray cubic crystals
Density：6.445 g/cm3
Melting point：790 °C (1,450 °F; 1,060 K)
Band gap：0.18 eV
Electron mobility：500 cm2 V−1 s−1
Crystal structure：Halite (cubic), cF8
Application
Generally Pb is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of Quantum confinement, the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR photodetectors and thermoelectric generator.
 20+ YEARS EXPERIENCESENIOR BUSINESS MANAGER |
