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25617-98-5
InN
490700PD
99.9%
- 100 mesh
247-130-6
Characteristic
Indium nitride is a new tri-group nitride material.The attraction of this material lies in its excellent electronic transport performance and narrow energy band, which is expected to be used in the manufacture of new high frequency terahertz optoelectronic devices.
Indium nitride (InN) is a type of nitride semiconductor material.The stable phase at room temperature and pressure is a hexagonal wurtzite structure, which is a direct band-gap semiconductor material.
Chemical formula：InN
Molar mass：128.83 g/mol
Appearance：black powder
Density：6.81 g/cm3
Melting point：1,100 °C (2,010 °F; 1,370 K)
Solubility in water：hydrolysis
Band gap：0.65 eV (300 K)
Electron mobility：3200 cm2/(V.s) (300 K)
Thermal conductivity：45 W/(m.K) (300 K)
Refractive index (nD)：2.9
Crystal structure：Wurtzite (hexagonal)
Application
Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved. The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.
Characteristic
Indium nitride is a new tri-group nitride material.The attraction of this material lies in its excellent electronic transport performance and narrow energy band, which is expected to be used in the manufacture of new high frequency terahertz optoelectronic devices.
Indium nitride (InN) is a type of nitride semiconductor material.The stable phase at room temperature and pressure is a hexagonal wurtzite structure, which is a direct band-gap semiconductor material.
Chemical formula：InN
Molar mass：128.83 g/mol
Appearance：black powder
Density：6.81 g/cm3
Melting point：1,100 °C (2,010 °F; 1,370 K)
Solubility in water：hydrolysis
Band gap：0.65 eV (300 K)
Electron mobility：3200 cm2/(V.s) (300 K)
Thermal conductivity：45 W/(m.K) (300 K)
Refractive index (nD)：2.9
Crystal structure：Wurtzite (hexagonal)
Application
Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved. The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.
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