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25617-97-4
GaN
310700ST
99.99%-99.9999%
1 inch dia x 0.25 inch th.etc
247-129-0
Characteristic
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special[clarification needed] properties for applications in optoelectronic,[8][9] high-power and high-frequency devices.
Chemical formula：GaN
Molar mass：83.730 g/mol
Appearance：yellow powder
Density：6.1 g/cm3
Melting point：>1600 °C
Solubility in water：Insoluble
Band gap：3.4 eV (300 K, direct)
Electron mobility：1500 cm2/(V·s) (300 K)
Thermal conductivity：1.3 W/(cm·K) (300 K)
Refractive index (nD)：2.429
Crystal structure：Wurtzite
Application
Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.
Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.
Characteristic
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special[clarification needed] properties for applications in optoelectronic,[8][9] high-power and high-frequency devices.
Chemical formula：GaN
Molar mass：83.730 g/mol
Appearance：yellow powder
Density：6.1 g/cm3
Melting point：>1600 °C
Solubility in water：Insoluble
Band gap：3.4 eV (300 K, direct)
Electron mobility：1500 cm2/(V·s) (300 K)
Thermal conductivity：1.3 W/(cm·K) (300 K)
Refractive index (nD)：2.429
Crystal structure：Wurtzite
Application
Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.
Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.
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