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1303-11-3
InAs
493300WF
<100>
4‘’/6‘’
215-115-3
Class 6.1
UN1557
PG III
Characteristic
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.
Chemical formula：InAs
Molar mass：189.740 g/mol
Density：5.67 g/cm3
Melting point：942 °C (1,728 °F; 1,215 K)
Band gap：0.354 eV (300 K)
Electron mobility：40000 cm2/(V*s)
Thermal conductivity：0.27 W/(cm*K) (300 K)
Refractive index (nD)：3.51
Crystal structure：Zinc Blende
Application
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Characteristic
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.
Chemical formula：InAs
Molar mass：189.740 g/mol
Density：5.67 g/cm3
Melting point：942 °C (1,728 °F; 1,215 K)
Band gap：0.354 eV (300 K)
Electron mobility：40000 cm2/(V*s)
Thermal conductivity：0.27 W/(cm*K) (300 K)
Refractive index (nD)：3.51
Crystal structure：Zinc Blende
Application
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
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