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You are here: Home » Products » Thin film coating materials » Ceramic Sputtering Targets » Oxide Ceramic Sputtering Target » Indium Oxide (In2O3)-Sputtering Target

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Indium Oxide (In2O3)-Sputtering Target

  • 1312-43-2

  • In2O3

  • 490800ST

  • 99.99 %-99.995 %

  • φ101.6*4 mm

  • 215-193-9

Availability:

Characteristic

Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium. It is a new n-type transparent semiconductor functional material with wide bandgap width, small resistivity and high catalytic activity, which has been widely used in photoelectric field, gas sensor and catalyst. In addition to the above functions, the danami level of indium oxide particle size also has the surface effect, quantum size effect, small size effect and macroscopic quantum tunneling effect of nanomaterials.


Chemical formula:In2O3

Molar mass:277.64 g/mol

Appearance:yellowish green odorless crystals

Density:7.179 g/cm3

Melting point:1,910 °C (3,470 °F; 2,180 K)

Solubility in water:insoluble

Band gap:~3 eV (300 K)

Magnetic susceptibility (χ):−56.0·10−6 cm3/mol



Application

Indium oxide is used in some types of batteries, thin film infrared reflectors transparent for visible light (hot mirrors), some optical coatings, and some antistatic coatings. In combination with tin dioxide, indium oxide forms indium tin oxide (also called tin doped indium oxide or ITO), a material used for transparent conductive coatings.


In semiconductors, indium oxide can be used as an n-type semiconductor used as a resistive element in integrated circuits.


In histology, indium oxide is used as a part of some stain formulations.



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