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1303-00-0
GaAs
313300WF
<100>
215-114-8
Class 6.1
UN1557
PG II
Characteristic
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Chemical formula：GaAs
Molar mass：144.645 g/mol
Appearance：Gray crystals
Odor：garlic-like when moistened
Density：5.3176 g/cm3
Melting point：1,238 °C (2,260 °F; 1,511 K)
Solubility in water：insoluble
Solubility：soluble in HCl
insoluble in ethanol, methanol, acetone
Band gap：1.441 eV (at 300 K)
Electron mobility：9000 cm2/(V·s) (at 300 K)
Magnetic susceptibility (χ)：-16.2×10−6 cgs
Thermal conductivity：0.56 W/(cm·K) (at 300 K)
Refractive index (nD)：3.3
Crystal structure：Zinc blende
Application
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Characteristic
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Chemical formula：GaAs
Molar mass：144.645 g/mol
Appearance：Gray crystals
Odor：garlic-like when moistened
Density：5.3176 g/cm3
Melting point：1,238 °C (2,260 °F; 1,511 K)
Solubility in water：insoluble
Solubility：soluble in HCl
insoluble in ethanol, methanol, acetone
Band gap：1.441 eV (at 300 K)
Electron mobility：9000 cm2/(V·s) (at 300 K)
Magnetic susceptibility (χ)：-16.2×10−6 cgs
Thermal conductivity：0.56 W/(cm·K) (at 300 K)
Refractive index (nD)：3.3
Crystal structure：Zinc blende
Application
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
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