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CuInGaSe(1:1:1:2)
2949313400PD
99.999%
- 325 mesh (40 mic aps)
Characteristic
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide.
Chemical formula：CuIn(1-x)GaxSe2
Density：~5.7 g/cm3
Melting point：1,070 to 990 °C (1,960 to 1,810 °F; 1,340 to 1,260 K) (x=0–1)
Band gap：1.0–1.7 eV (x=0–1)
Crystal structure：tetragonal
Application
It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry. In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.
Characteristic
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide.
Chemical formula：CuIn(1-x)GaxSe2
Density：~5.7 g/cm3
Melting point：1,070 to 990 °C (1,960 to 1,810 °F; 1,340 to 1,260 K) (x=0–1)
Band gap：1.0–1.7 eV (x=0–1)
Crystal structure：tetragonal
Application
It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry. In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.
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