High purity sputtering targets for semiconductor chips

Sputtering target is the most important factor to determine the yield of semiconductor.  So applied to the semiconductor and the required precision degree, is the highest purity, degree of purity of sputtering target materials and precision will directly affect the performance of semiconductor, the difference of sputtering target materials is the most direct consequences caused semiconductor short circuit, so when we talk about semiconductor sputtering target materials, often talk about is high purity sputtering target materials.  These targets can be divided into aluminum target, titanium target, copper target, tantalum target, tungsten titanium target and so on.  

The sputtering target size and shape of high purity metal sputtering target can meet the requirements of most popular deposition tools: disk target, column target, stepped chip target, plate target (Dia <650mm, thickness > 1mm) rectangular target, slice target, stepped rectangular target (length <1500mm, width <300mm,  Thickness > 1mm) Tubular target/rotary sputtering target (outer diameter <300mm, thickness > 2mm)  

High purity metal sputtering target

Purity 99.9% (3N), 99.95% (3N5), 99.99% (4N), 99.999% (5N), 99.9995% (5N5), 99.9999% (6N)  

Principle of high purity sputtering target  

Sputtering target is the key process of silicon wafer material processing, which mainly does one thing, is to wear a layer of semiconductor "clothes", a layer of film.  But instead of protecting, the film conducts electricity.  Because the silicon wafer itself does not conduct electricity, and the chip needs to conduct electricity to process information, so the metal medium is needed, and the source of the metal medium is the sputtering target.  Ion emitter, through a high speed to emit ions, and then sputtering target as the recipient of these ions, after the impact of these ions, their own energy is also very high, the surface of the metal plasma emitted to the silicon wafer, forming a layer of coating.