Gallium Arsenide (GaAs)-Powder
Product Description
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Characteristic
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Chemical formula：GaAs
Molar mass：144.645 g/mol
Appearance：Gray crystals
Odor：garlic-like when moistened
Density：5.3176 g/cm3
Melting point：1,238 °C (2,260 °F; 1,511 K)
Solubility in water：insoluble
Solubility：soluble in HCl
insoluble in ethanol, methanol, acetone
Band gap：1.441 eV (at 300 K)
Electron mobility：9000 cm2/(V·s) (at 300 K)
Magnetic susceptibility (χ)：-16.2×10−6 cgs
Thermal conductivity：0.56 W/(cm·K) (at 300 K)
Refractive index (nD)：3.3
Crystal structure：Zinc blende
Application
Semiconductors (transistors, lasers, solar cells)Gallium arsenide is used in semiconductor applications. It is also used in the manufacture of devices such as microwave frequency integrated circuits, Gunn diodes, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes and optical windows. Further, it is used for single-crystalline thin film solar cells and multi-junction solar cells. In addition, it is used for the detection of X-rays.