Third generation semiconductor - gallium nitride

Publish Time: 2021-11-19     Origin: Site

Gallium nitride (GaN) is a kind of semiconductor material composed of nitrogen and gallium. Because its band gap width is greater than 2.2eV, it is also known as wide band gap semiconductor material, and also known as the third generation semiconductor material in China.  

Gallium nitride and other semiconductor materials

In the figure above, we can see that gallium nitride is 3 times larger than silicon in band gap width, 10 times higher in breakdown field strength, 3 times faster in saturated electron migration, and 2 times higher in thermal conductivity.  Some of the advantages of these performance improvements are that gallium nitride is more suitable for high-power, high-frequency power devices than silicon, while being smaller and more power dense.  

Excellent properties of gallium nitride  

Thanks to gallium nitride material itself, the outstanding performance, make made of gallium nitride is better than traditional silicon/MOSFET and IGBT chip area is smaller, at the same time because of the more resistant to high voltage, high current, gan chip power density is bigger, so power density/area than silicon, due to the use of gallium nitride chip after also reduced the surrounding the use of other components, capacitors,  The passive components such as inductors and coils are much less than the silicon based scheme, which further reduces the volume. Therefore, the gallium nitride fast charging head seen this time is not only small in size, but also can provide stronger power output.  

What are the other important applications of gallium nitride besides quick filling?  

Gallium nitride materials, currently there are three more important directions, respectively in the photoelectric field, including our now common LED, as well as lidar and VCSEL sensors;  In the field of power, all kinds of electronic and electric devices are used in fast charging head, frequency converter, new energy vehicles, consumer electronics and other electronic and electric conversion scenarios;  Radio frequency field, including 5G base station, military radar, low orbit satellite, aerospace and other fields.

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