Indium Phosphide (InP)-Wafer

Characteristic

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Chemical formula：InP

Molar mass：145.792 g/mol

Appearance：black cubic crystals

Density：4.81 g/cm³, solid

Melting point：1,062 °C (1,944 °F; 1,335 K)

Solubility：slightly soluble in acids[1]

Band gap：1.344 eV (300 K; direct)

Electron mobility：5400 cm2/(V·s) (300 K)

Thermal conductivity：0.68 W/(cm·K) (300 K)

Refractive index (nD)：3.1 (infrared);

3.55 (632.8 nm)

Crystal structure：Zinc blende

Application

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

InP.pdf