Gallium Arsenide (GaAs)-Sputtering Target

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Characteristic

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.

Chemical formula：GaAs

Molar mass：144.645 g/mol

Appearance：Gray crystals

Odor：garlic-like when moistened

Density：5.3176 g/cm³

Melting point：1,238 °C (2,260 °F; 1,511 K)

Solubility in water：insoluble

Solubility：soluble in HCl

                   insoluble in ethanol, methanol, acetone

Band gap：1.441 eV (at 300 K)

Electron mobility：9000 cm2/(V·s) (at 300 K)

Magnetic susceptibility (χ)：-16.2×10⁻⁶ cgs

Thermal conductivity：0.56 W/(cm·K) (at 300 K)

Refractive index (nD)：3.3

Crystal structure：Zinc blende

Application

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

Gallium Arsenide_MSDS.pdf