Research&Development

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RESEARCH&DEVELOPMENT

Every year, we invest a large amount as R&D funds.We always take the research and development of new products and new technologies as the top priority of our company’s operation.Our R&D engineers have mastered a lot of skills and experiences, We provide these R&D customized production services for customers.

Ti3SiC2 sintering Target

Ti3SiC2 is hexagonal crystal, which is composed of planar Si layer connected by Ti C octahedron to form layered structure.
Ti3SiC2 like metal has an excellent thermal conductor, easy to process, relatively "soft", not sensitive to thermal shock, like ceramics with good oxidation resistance, the most important is still maintain high strength at high temperature. Ti3SiC2 integrates the characteristics of ceramic and metal, high elastic modulus, high melting point and high temperature stability reflect the properties of similar ceramics;

Character：

Density: 4.64g/cm2,
Resistor：~10Ω
No color difference, No spots.

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ZrS2 powder, 99.9%, -100Mesh

Zirconium disulfide (ZrS2) has a layered structure and it belongs to group IV transition metal dichalcogenides (TMDCs). ZrS2 is thermodynamically stable, environmentally friendly with high sensitivity, and low-cost production. ZrS2 monolayers exhibited obvious n-type transport characteristics with relatively high mobility.
Applications：

ZrS2 is a promising material for optoelectronics because of its greater carrier mobility at room temperature and higher current density than MoS2, which are desirable for low-power devices. With an indirect bandgap around 1.7 eV and direct bandgap around 2.0 eV for the monolayer, ZrS2 finds applications in thermoelectrics, Schottky solar cells, photodetectors, FETs and catalytic hydrogen production.
ZrS2 2D nanomaterials have a high electron mobility, i.e., 1200 cm2/Vs, which is more tham three times larger than that of the widely investigated MoS2 (340 cm2/Vs). FET devices based on ZrS2 have higher electronic sensitivity and excellent semiconducting properties. Calculations showed that ZrS2-based based tunneling fieldeffect transistors (TFETs) can have sheet current densities of up to 800 μA/μm (100 times higher than that of MoS2), giving the rise of great application potential in low-power devices.

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IZO sputtering target, 99.9%

Product Name: Indium Zinc Oxide (IZO) Sputtering Targets
Formula: IZO (In2O3/ZnO, 90/10 wt%)
Purity: 99.9%
Shape: Rectangle Targets, Custom-made
Size: 249.6*125*6mm
The IZO ceramic target (99.99% in purity and density) comprises 90 wt.% of ln2O3 and 10 wt.% of ZnO. The direct current (dc) magnetron sputtering system is utilized for the film deposition. Without/with the ion-assisted deposition (IAD) technique, the electrical, optical, and structural properties of these films prepared by different dc powers (such as 50 W, 80 W, and 100 W) are an optimal IZO deposition condition which is developed for flexible organic light-emitting device (OLED) applications.

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Hafnium carbide powder

Hafnium carbide powder material, molecular formula HfC, sodium chloride type cubic crystal system，grey-black powder，Melting point 3890 ℃, the theoretical density 12.7 g/cm3, thermal conductivity is 6.28【W（m·K）-1】（20℃）, volume resistivity 1.95*10-4Ω·cm（2900℃）, thermal expansion coefficient 6.73*10-6/℃, the resistivity of 40~50/μΩ·cm, elastic modulus 35.9*103MPa, compressive strength 1380MPa. Very suitable for rocket nozzles, which can be used as nose cones of re-entry space rockets. Used in ceramics and other industries.

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R&D FIELDS

Chalcogenide New Materials
Nano Powder New Materials
Coating Film New Materials