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12040-02-7
SnTe
525000PC
99.999%
3-12mm
234-914-8
Class 6.1
UN3288
PGIII
Characteristic
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV.
Chemical formula：SnTe
Molar mass：246.31 g/mol
Appearance：gray cubic crystals
Density：6.445 g/cm3
Melting point：790 °C (1,450 °F; 1,060 K)
Band gap：0.18 eV
Electron mobility：500 cm2 V−1 s−1
Crystal structure：Halite (cubic), cF8
Application
Tin(II) telluride is used as detector material for photodiodes in infrared used spectral range.
Characteristic
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV.
Chemical formula：SnTe
Molar mass：246.31 g/mol
Appearance：gray cubic crystals
Density：6.445 g/cm3
Melting point：790 °C (1,450 °F; 1,060 K)
Band gap：0.18 eV
Electron mobility：500 cm2 V−1 s−1
Crystal structure：Halite (cubic), cF8
Application
Tin(II) telluride is used as detector material for photodiodes in infrared used spectral range.
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